Electric Properties of SrTiO₃ Thin Films Prepared by RF Sputtering

Abstract

Dielectric SrTiO 3 thin films have been prepared on Pt/SiO 2 /Si-wafer by means of a conventional rf-magnetron sputtering technique. Electric and dielectric properties of the films have been studied. It is demonstrated that the leakage current of the films is strongly dependent on the atmosphere during deposition. The SrTiO 3 film 75 nm in thickness fabricated in pure O 2 of 26.6 Pa at 600°C obtained the lowest leakage current density of 4.0×10 -9 A/cm 2 at 2 V. Analysis of the leakage current vs applied voltage characteristic indicated that the conduction in the higher electric field was due to the Pool-Frenkel emission.