Fabrication of the Si/Al₂O₃/SiO₂/Si Structure Using O₂ Annealed Al₂O₃/Si Structure

Abstract

The formation of a SiO 2 layer in the interface between epitaxial Al 2 O 3 (100) and a Si(100) substrate, in order to improve the insulation, was studied using O 2 annealing at 1000°C, and the Al 2 O 3 (100)/SiO 2 /Si(100) structure was proposed as a Si-on-insulator (SOI) substrate. The breakdown voltage property of Al 2 O 3 /SiO 2 /Si, rather than that of the Al 2 O 3 /Si structure, was improved from 8 V to 50 V. Moreover, Si(100) growth on the Al 2 O 3 /SiO 2 /Si structure was carried out, and the morphology of the Si top layer was very smooth. Metal-oxide-semiconductor field effect transistors (MOSFETs) on the substrates show excellent electrical properties, which indicates the high crystallinity of SOI.