Pinning Properties of PLD (NdxSmxGd1−2x)Ba2Cu3O7−δ Thin films

Abstract

The self field critical current density, flux relaxation rate and accommodation field is studied in ternary rare earth (RE) barium cuprate thin films made by PLD on STO, with RE=Nd, Sm and Gd. By systematically changing the substitution level of Nd and Sm in GdBCO films, we found that the accommodation field at low temperature is increased due to the substitution. However, the decay of the self field critical current density and less effective pinning at higher temperature make the high level substituted films less attractive compared with the low level substituted film from the application point of view.