Gate capacitance optimization for arrays of carbon nanotube field-effect transistors

Xuelin Wang; H.‐S. Philip Wong; P. Oldiges; R.J. Miller

doi:10.1109/drc.2003.1226885

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Gate capacitance optimization for arrays of carbon nanotube field-effect transistors

Xuelin Wang H.‐S. Philip Wong P. Oldiges R.J. Miller

Year: 2004 Vol: 393 Pages: 87-88

DOI: 10.1109/drc.2003.1226885

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Abstract

In this paper, three different gate electrode configurations of CNFETs are studied by calculating the capacitance per tube of carbon nanotube arrays. We then show, that an optimal design point can be found a practical configuration.

Keywords:

Capacitance Carbon nanotube Materials science Carbon nanotube field-effect transistor Electrode Transistor Field-effect transistor Point (geometry) Optoelectronics Carbon nanotube quantum dot Nanotube Quantum capacitance Nanotechnology Electrical engineering Voltage Engineering Physics

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Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Analog and Mixed-Signal Circuit Design

Physical Sciences → Engineering → Biomedical Engineering

Gate capacitance optimization for arrays of carbon nanotube field-effect transistors

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