Characterization of GaAs layers grown by molecular beam epitaxy

Abstract

Epitaxial layers of GaAs and GaAs:Si highly doped were grown on GaAs(100) at a substrate temperature of 600 °C by molecular beam epitaxy. The layers were characterized by Auger electron spectroscopy, double crystal X ray diffractometry and low temperature photoluminescence (PL). It is shown that the main impurity present in the layers is carbon. The PL spectra of the GaAs:Si highly doped presents the Burstein‐Moss effect and that indirect optical transition takes place.