Abstract
Schottky AlxGa1−xN photodetectors were developed for solar ultraviolet A and B detection. Modeling is performed by developing programs of simulation leading to the most suitable device structure such as doping density, semiconductor thickness, etc. Simulations allow us to determine the most appropriate parameters
Keywords:
Photodetector Ultraviolet Schottky diode Optoelectronics Schottky barrier Materials science Semiconductor Doping Wide-bandgap semiconductor
Metrics
11
Cited By
1.42
FWCI (Field Weighted Citation Impact)
11
Refs
0.82
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Photocathodes and Microchannel Plates
Physical Sciences → Engineering → Biomedical Engineering
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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