JOURNAL ARTICLE
Intersubband relaxation time for InxGa1−xAs/AlAs quantum wells with large transition energy
G. GhislottiElisa RiedoDaniele IelminiM. Martinelli
Year: 1999 Journal: Applied Physics Letters Vol: 75 (23)Pages: 3626-3628 Publisher: American Institute of Physics
Abstract
Intersubband relaxation time for InxGa1−xAs/AlAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Γ–X coupling on intersubband decay is discussed.
Keywords:
Quantum well Relaxation (psychology) X-ray absorption spectroscopy Condensed matter physics Coupling (piping) Gallium arsenide Materials science Atomic physics Chemistry Absorption spectroscopy Physics Optics
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0.63
FWCI (Field Weighted Citation Impact)
21
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0.63
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Spectroscopy and Laser Applications
Physical Sciences → Chemistry → Spectroscopy
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
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