High speed InP-based HBTs and OEICs

Abstract

InP-based HBT-technology is a prime candidate to provide ultra fast ICs for 40 and 80 Gb/s operation and has the unique potential for realizing monolithic opto/electronic ICs (OEIC) at the mainstream 1.55/spl mu/m wavelength. We review our own as well as other group's work on 40 Gb/s lightwave communication circuits and address on-going scaling efforts for InP-HBTs with f/sub t/ and f/sub max/ > 300 GHz. Preliminary device and circuit simulations show extendibility of aggressively scaled HBT-technology towards 160 Gb/s operation.