JOURNAL ARTICLE
Optical properties of GaAs/GaAs/sub 1-x/P/sub x/ superlattices
Abstract
Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.
Keywords:
Superlattice Photoluminescence Conduction band Materials science Gallium arsenide Condensed matter physics Band offset Excitation Offset (computer science) Valence band Valence (chemistry) Optoelectronics Electron Chemistry Band gap Physics
Metrics
0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
1
Refs
0.05
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Quantum Dots Synthesis And Properties
Physical Sciences → Materials Science → Materials Chemistry
Related Documents
JOURNAL ARTICLE
Optical properties of GaP/GaAs/sub x/P/sub 1-x/ strained-layer superlattices
P. L. GourleyR. M. BiefeldG. C. OsbournI. J. Fritz
Journal: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) Year: 1982 Vol: 35 (2)Pages: 139-46
JOURNAL ARTICLE
Mbe Growth and Characterization of (GaAs)l−x(Si2)x and (GaAs)1−x(Si2)x/GaAs Superlattices on GaAs Substrates
H. P. LeeF. J. SzalkowskiXiaolu ZengJ. WolfenstineJoel W. Ager
Journal: MRS Proceedings Year: 1995 Vol: 379
JOURNAL ARTICLE
Optical Properties of (InAs)1/(GaAs)m Strained-Layer Superlattices
Masaaki NakayamaTakeshi FujitaIsao TanakaHitoshi NishimuraHikaru Terauchi
Journal: Japanese Journal of Applied Physics Year: 1993 Vol: 32 (S1)Pages: 160-160
JOURNAL ARTICLE
GaAsxP1-x—GaAs pin heterojunction photodetectors
Tayaallen RamachandranW. Moroney
Journal: IEEE Transactions on Electron Devices Year: 1965 Vol: 12 (9)Pages: 510-510
JOURNAL ARTICLE
Ion Channeling Analysis of GaAsxP1-X/Gap Strained-Layer Superlattices
S. T. PicrauxR. M. BiefeldG. C. OsbournW. K. Chu
Journal: MRS Proceedings Year: 1983 Vol: 25