Photoelectricity properties of BaTiO₃/γ-Fe₂O₃composite granular film

Abstract

Ag/[BaTiO3/γ-Fe2O3]/Si heterojunctions were grown by high vacuum magnetron sputtering system and were annealed at temperature 100–300°C under the vacuum conditions. All samples exhibit the rectification behaviour in the dark and under light irradiation. The resistive switching effect is observed in Ag/[BaTiO3/γ-Fe2O3]/Si heterojunctions. The resistive switching effect under white light irradiation is more obvious than that in the dark. The photovoltage effect and photoconductivity effect of Ag/[BaTiO3/γ-Fe2O3]/Si heterojunctions are observed and become stronger with increasing annealed temperature.