JOURNAL ARTICLE
Electrical transport in the amorphous Ge1-xSe2Cdxsystem
Year: 1993 Journal: Semiconductor Science and Technology Vol: 8 (3)Pages: 344-346 Publisher: IOP Publishing
Abstract
DC conductivity measurements have been made in the bulk amorphous Ge1-xSe2Cdx samples as a function of composition (x=0, 0.011, 0.014, 0.02), temperature (295 K to 473 K) and electric field strength. DC conductivity is found to increase with increase in the cadmium content and with increase in electric field strength. In the limited range of temperature the DC conductivity can be considered as an activated process. The DC conductivity activation energy depends upon the temperature and the applied electric field.
Keywords:
Electrical resistivity and conductivity Electric field Amorphous solid Conductivity Activation energy Analytical Chemistry (journal) Atmospheric temperature range Materials science Chemistry Field strength Electrical engineering Crystallography Physics Thermodynamics Magnetic field Physical chemistry
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FWCI (Field Weighted Citation Impact)
16
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0.05
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Citation History
Topics
Phase-change materials and chalcogenides
Physical Sciences → Materials Science → Materials Chemistry
Glass properties and applications
Physical Sciences → Materials Science → Ceramics and Composites
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
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