Correlation between barrier height and interface structure of Schottky diodes

R. F. Schmitsdorf; T.U. Kampen; Winfried Mönch

doi:10.1016/0039-6028(94)00791-8

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Correlation between barrier height and interface structure of Schottky diodes

R. F. Schmitsdorf T.U. Kampen Winfried Mönch

Year: 1995 Journal: Surface Science Vol: 324 (2-3)Pages: 249-256 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(94)00791-8

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Keywords:

Schottky barrier Stacking fault Dipole Diode Stacking Condensed matter physics Silicon Schottky diode Materials science Chemistry Optoelectronics Physics

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Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Correlation between barrier height and interface structure of Schottky diodes

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