The Development of High-Power, Low-Frequency PIN Diodes

M. Caulton; A. Rosen; P.J. Stabile; A. Gombar

doi:10.1109/mwsym.1981.1129889

ScienceGate Book Chapters

JOURNAL ARTICLE

The Development of High-Power, Low-Frequency PIN Diodes

M. Caulton A. Rosen P.J. Stabile A. Gombar

Year: 2005 Vol: 81 Pages: 255-257

DOI: 10.1109/mwsym.1981.1129889

Get Full-Text PDF Get Analytical Report

Abstract

The application of PIN diodes in high-power systems at frequencies as low as 500 kHz requires the use of diodes with intrinsic layers of long carrier lifetimes, operation at low rf-to-bias current ratios, and large reverse bias voltages. The development of suitable diodes, operating conditions, and test results in actual circuits are described.

Keywords:

Diode PIN diode Materials science Electronic circuit Optoelectronics Power (physics) Voltage Radio frequency Biasing Low voltage Electrical engineering Current (fluid) Low frequency Computer science Engineering Physics Telecommunications

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.06

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

The Development of High-Power, Low-Frequency PIN Diodes

Abstract

Metrics

Topics

Related Documents

High-Frequency Power in Tunnel Diodes

P-I-N Diodes for Low-Frequency High-Power Switching Applications

Low-power passive frequency doublers of high efficiency using varactor diodes

High-Frequency High-Power Operation of Tunnel Diodes

A high power high frequency laser diodes driver