JOURNAL ARTICLE

Nonlinear macroscopic polarization in GaN/AlxGa1−xN quantum wells

G. VaschenkoD. PatelCarmen S. MenoniH. M. NgA. Y. Cho

Year: 2002 Journal:   Applied Physics Letters Vol: 80 (22)Pages: 4211-4213   Publisher: American Institute of Physics

Abstract

We present experimental evidence of the nonlinear behavior of the macroscopic polarization in GaN/AlxGa1−xN quantum wells. This behavior is revealed by determining the barrier-well polarization difference as a function of applied hydrostatic pressure. The polarization difference and corresponding built-in electric field in the wells increase with applied pressure at a much higher rate than expected from the linear model of polarization. This result, universally observed in the quantum well structures with different AlN mole fraction in the barriers, is explained by the nonlinear dependence of the piezoelectric polarization in GaN and AlN on the strain generated by pressure.

Keywords:
Quantum well Polarization (electrochemistry) Hydrostatic pressure Condensed matter physics Nonlinear system Electric field Piezoelectricity Materials science Wide-bandgap semiconductor Mole fraction Physics Chemistry Optics Quantum mechanics Thermodynamics Composite material

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16
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0.77
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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Acoustic Wave Resonator Technologies
Physical Sciences →  Engineering →  Biomedical Engineering
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
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