Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula; Markku Åberg; Jyrki Kiihamäki; Helena Ronkainen

doi:10.1109/esscirc.2003.1257209

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Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula Markku Åberg Jyrki Kiihamäki Helena Ronkainen

Year: 2004 Pages: 611-614

DOI: 10.1109/esscirc.2003.1257209

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Abstract

We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

Keywords:

Capacitive sensing Silicon on insulator CMOS Materials science Wafer Pressure sensor Microelectromechanical systems Optoelectronics Relaxation oscillator Electrical engineering Electronic engineering Silicon Engineering Voltage Voltage-controlled oscillator

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Advanced MEMS and NEMS Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

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