Carrier–phonon coupling in GaAs_1−xBi_x/GaAs quantum wells

Abstract

The phonon-assisted emission of GaAs1 − xBix quantum wells with Bi concentrations up to x = 0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier–phonon coupling is observed manifesting itself in a Huang–Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier–phonon scattering.