Synthesis of few-layered graphene by H2O2 plasma etching of graphite

Abstract

Herein, we reported an approach to synthesize few-layered graphene by etching of the graphite using H2O2 plasma technique. The synthesized few-layered graphene was characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The analysis showed that few-layered graphene was formed in high quality level. The XPS analysis suggested that H2O2 plasma etching of graphite could oxidize graphene and generated COH and >CO groups on the graphene surfaces. The H2O2 plasma technique is an easy and environmental friendly method to synthesize few-layered graphene from the graphite.