High-speed etching of single-crystal 6H-SiC by femtosecond Ti:sapphire laser ablation was demonstrated. Fine line pattern of 60 /spl mu/m in depth was fabricated with relatively smooth etched surface with little damage.
Loren R. CeramiEric MazurStefan NolteChris B. Schaffer
S. Torres-PeiróJennifer González AusejoOmel Mendoza‐YeroGladys Mínguez‐VegaJesús Láncis
Zhi ChenXing FuNa GengChunguang Hu