JOURNAL ARTICLE
The state of the art of group III nitride based light emitters
Abstract
Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters.
Keywords:
Nitride Optoelectronics Materials science Wavelength Substrate (aquarium) Conductivity Nanotechnology Chemistry
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Diamond and Carbon-based Materials Research
Physical Sciences → Materials Science → Materials Chemistry
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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