Sol-Gel Derived Pb(Zr_0.53Ti_0.47)O₃ Thin Films on BaPbO₃ Electrode

Abstract

PbZr0.53Ti0.47 (PZT)/BaPbO3(BPO) heterostructure was fabricated by combining the sol-gel and RF-magnetron sputtering techniques. The BPO bottom electrode can effectively prevent the formation of the rosette structure of PZT and reduce the crystallization temperature to 550°C which is 100°C lower than that needed in PZT/Pt film. The BPO bottom electrode not only improves the fatigue property but also reduces the leakage current density. Thus, the BPO electrode can be a good candidate for use in PZT ferroelectric capacitor.