Nano-patterning by laser interference lithography

Abstract

In this paper, argon ion laser of 514.5 nm, is used for interference lithography. Two mutually coherent laser beams intersect at the surface of a coated substrate, creating a sinusoidal intensity profile. This is then transferred into the holographic film, creating a line and space pattern with spatial period, /spl Lambda/ = /spl lambda//2sin/spl theta/, where /spl theta/ = 40 /spl deg/ thus, /spl Lambda/ = 400 nm.