Laser induced crystallization of amorphous Ge2Sb2Te5 films

Abstract

The crystallization behavior of Ge2Sb2Te5 thin films has been analyzed by atomic force microscopy and optical reflection measurements on various time scales in order to determine the crystallization kinetics including the crystallization mechanism, the corresponding activation barrier, and the Avrami coefficient. On the minute time scale, thin amorphous films were isothermally crystallized in a furnace under a protective Ar atmosphere. From these measurements the activation energy for crystallization was determined to be (2.0±0.2) eV, in close agreement with previous studies using different techniques. The isothermal measurements also revealed a temperature dependent incubation time for the formation of critical nuclei, which is compared with recent theories. On the nanosecond time scale, Ge2Sb2Te5 was locally crystallized with a focused laser. Either crystalline spots of submicron size were generated in an as deposited amorphous film or amorphous bits in an otherwise crystalline film were recrystallized. For the formation of crystalline spots in an as deposited amorphous film a minimum time of (100±10) ns was found, which is identified as the minimum incubation time for the formation of critical nuclei. In contrast, the complete crystallization of melt-quenched amorphous bits in a crystalline matrix was possible in 10 ns. This is attributed to the presence of quenched-in nuclei inside the amorphous bits. The combination of optical measurements with atomic force microscopy reveals the formation and growth of crystalline bits and shows that the crystal growth in vertical direction strongly affects the reflectivity changes.