Growth of RuO/sub x/ thin films by metalorganic chemical vapor deposition

Abstract

RuO/sub x/ thin films were deposited on TiN/SiO/sub 2//Si substrates by metal organic chemical vapor deposition (MOCVD) at deposition temperatures of 250/spl deg/C-400/spl deg/ C. We have used Ru(mhd), as a metal organic (MO) source. No films were deposited without the addition of O/sub 2/ gas. RuO/sub 2/ films were deposited at high O/sub 2/ addition. For the deposition of Ru films in the surface reaction controlled region, the activation energy was 0.58 eV. The smooth and well-adherent Ru films had very low resistivities. The microstructure of Ru films was greatly dependent on deposition conditions. Ru films deposited at 27/spl deg/C showed a good step coverage.