Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

N.C. Helman; J. E. Roth; J. Altug; David A. B. Miller; D. P. Bour

doi:10.1109/leos.2004.1363312

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Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

N.C. Helman J. E. Roth J. Altug David A. B. Miller D. P. Bour

Year: 2004 Vol: 2 Pages: 461-462

DOI: 10.1109/leos.2004.1363312

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Abstract

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.

Keywords:

Materials science Optoelectronics Optical modulator Optics Facet (psychology) Waveguide Integrated optics Voltage Gallium arsenide Contrast ratio Modulation (music) Electrical engineering Physics Phase modulation Engineering

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

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