JOURNAL ARTICLE

12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector

Abstract

We present a 12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector (CMOS-APD) realized in 65-nm CMOS technology. The optical detection bandwidth limitation of CMOS-APD due to the carrier transit time is compensated by underdamped TIA. With this optical receiver, 12.5-Gb/s 850-nm optical data are successfully detected with bit-error rate less than 10 −12 at the incident optical power of −2 dBm. The fabricated optical receiver has the core size of 0.24 × 0.1 mm 2 and its power consumption excluding output buffer is about 13.7 mW with 1.2-V supply voltage.

Keywords:
CMOS Photodetector Optoelectronics Avalanche photodiode Optical power Physics Electrical engineering Power consumption Detector Materials science Power (physics) Optics Engineering

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Topics

Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Optical Network Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Photonic Communication Systems
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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