ZnSe photoconductive switches with transparent electrodes

Abstract

High voltage photoconductive switches utilizing polycrystalline ZnSe are investigated. Experiments have been performed on longitudinal geometry ZnSe switches with perforated metal film electrodes, transparent electrolyte and plasma electrode. High bias fields up to 100 kV/cm and current densities in excess of 100 kA/cm/sup 2/ can be obtained in our ZnSe switches. Novel applications of hte switch which utilize nonlinear behavior at high fields are discussed.