CuInSe2 Thin Film Prepared by Evaporation of Cu2Se and In2Se3

Atsushi Ashida; Yoshio Hachiuma; Nobuyuki Yamamoto; Taichiro Ito; Yoshio Cho

doi:10.7567/jjaps.32s3.84

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CuInSe₂ Thin Film Prepared by Evaporation of Cu₂Se and In₂Se₃

Atsushi Ashida Yoshio Hachiuma Nobuyuki Yamamoto Taichiro Ito Yoshio Cho

Year: 1993 Journal: Japanese Journal of Applied Physics Vol: 32 (S3)Pages: 84-84 Publisher: Institute of Physics

DOI: 10.7567/jjaps.32s3.84

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Abstract

Preparation of CuInSe 2 thin films by evaporation of In 2 Se 3 and Cu 2 Se is proposed. Sequential evaporation of In 2 Se 3 and Cu 2 Se is superior in controlling composition of films and the p-type film with 24 cm 2 /V·s in Hall mobility is obtained. By heating substrates during deposition and using rf plasma, we have succeeded in obtaining the <112> highly oriented CuInSe 2 thin films.

Keywords:

Evaporation Thin film Deposition (geology) Analytical Chemistry (journal) Materials science Chemistry Nanotechnology Physics

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

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CuInSe₂ Thin Film Prepared by Evaporation of Cu₂Se and In₂Se₃

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CuInSe2 Thin Film Prepared by Evaporation of Cu2Se and In2Se3

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