Shengxiang WangMingsen GuoXiaohua SunTao LiuMeiya LiXingzhong Zhao
Bi 1.5 Zn 1.0 Nb 1.5 O 7 ∕ Ba 0.6 Sr 0.4 Ti O 3 ∕ Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN/BST/BZN) sandwich films were deposited by radio frequency magnetron sputtering. The relative permittivity and dielectric loss of the sandwich films were measured using planar Pt∕BZN∕BST∕BZN∕Pt∕Ti∕SiO2∕Si capacitor structures. The sandwich films with thickness of about 280nm exhibited relative permittivity around 206–247 and dielectric loss tangent (tanδ) less than 0.008 at 1MHz. Films annealed at 750°C had an ∼11% relative tunability of the permittivity at a maximum applied bias field of 0.77MV∕cm. The sandwich films are not ferroelectric at room temperature.
Jitendra Kumar SinghS. B. Krupanidhi
Muying WuXiaopeng LiLeijiao GeHelei DongShihui YuLingxia Li
Wangyang FuLingzhu CaoShufang WangZhihui SunBolin ChengQian WangHong Wang
Shihui YuLingxia LiWeifeng ZhangZheng SunHelei Dong
Jitendra SinghS. B. Krupanidhi