A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel

M. Mori; Motonari Katsuno; Shigetaka Kasuga; Tsuyoshi Murata; Takumi Yamaguchi

doi:10.1109/isscc.2004.1332618

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A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel

M. Mori Motonari Katsuno Shigetaka Kasuga Tsuyoshi Murata Takumi Yamaguchi

Year: 2004 Pages: 110-111

DOI: 10.1109/isscc.2004.1332618

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Abstract

A 2.5V CMOS image sensor using a pixel configuration of four photodiodes in one unit sharing seven transistors is presented. This image achieves a 2.25/spl mu/m pixel pitch with 25% aperture ratio in a 0.25/spl mu/m IP2M CMOS process.

Keywords:

Pixel Image sensor Photodiode CMOS Transistor CMOS sensor Dot pitch Aperture (computer memory) Optoelectronics Physics Computer science Electrical engineering Optics Engineering Voltage

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CCD and CMOS Imaging Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Image Processing Techniques and Applications

Physical Sciences → Engineering → Media Technology

Infrared Target Detection Methodologies

Physical Sciences → Engineering → Aerospace Engineering

A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel

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