Fabrication and characterisation of solar-blind Al <sub>0.6</sub> Ga <sub>0.4</sub> N MSM photodetectors

Necmi Bıyıklı; Ïbrahim Kimukin; Turgut Tut; O. Aytür; Ekmel Özbay

doi:10.1049/el:20048028

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Fabrication and characterisation of solar-blind Al _0.6 Ga _0.4 N MSM photodetectors

Necmi Bıyıklı Ïbrahim Kimukin Turgut Tut O. Aytür Ekmel Özbay

Year: 2005 Journal: Electronics Letters Vol: 41 (5)Pages: 274-275 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:20048028

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Abstract

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.

Keywords:

Responsivity Optoelectronics Materials science Photodiode Fabrication Photodetector Metalorganic vapour phase epitaxy Detector Microwave Optics Physics Telecommunications Nanotechnology Epitaxy Computer science

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Fabrication and characterisation of solar-blind Al _0.6 Ga _0.4 N MSM photodetectors

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