Epitaxial growth of yttria-stabilized zirconia thin films on R-plane sapphire as buffer layers for HTSC films

F. Wang; M. Siegel; R. Smithey; J. Geerk; G. Linker; O. Meyer

doi:10.1016/b978-0-444-89353-6.50099-3

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Epitaxial growth of yttria-stabilized zirconia thin films on R-plane sapphire as buffer layers for HTSC films

F. Wang M. Siegel R. Smithey J. Geerk G. Linker O. Meyer

Year: 1992 High Tc Superconductor Thin Films Pages: 611-615

DOI: 10.1016/b978-0-444-89353-6.50099-3

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Keywords:

Yttria-stabilized zirconia Materials science Cubic zirconia Epitaxy Sapphire Tetragonal crystal system Thin film Annealing (glass) Analytical Chemistry (journal) Substrate (aquarium) Mineralogy Crystallography Composite material Nanotechnology Optics Crystal structure Chemistry Ceramic Layer (electronics)

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Physics of Superconductivity and Magnetism

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advanced Condensed Matter Physics

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Epitaxial growth of yttria-stabilized zirconia thin films on R-plane sapphire as buffer layers for HTSC films

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